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US Patent 10050193 Magnetoresistance structure patterning

Patent 10050193 was granted and assigned to Allegro Microsystems, Llc on August, 2018 by the United States Patent and Trademark Office.

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Patent attributes

Current Assignee
Allegro Microsystems, Llc
Allegro Microsystems, Llc
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10050193
Date of Patent
August 14, 2018
Patent Application Number
15613313
Date Filed
June 5, 2017
Patent Citations Received
‌
US Patent 11852699 Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction
3
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US Patent 11630168 Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction
4
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US Patent 11630169 Fabricating a coil above and below a magnetoresistance element
5
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US Patent 11782105 Fabricating planarized coil layer in contact with magnetoresistance element
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US Patent 10263179 Method of forming tunnel magnetoresistance (TMR) elements and TMR sensor element
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US Patent 10566526 Patterning of a magnetoresistance structure including two hard masks
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US Patent 11552243 MRAM structure with ternary weight storage
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US Patent 10916438 Method of multiple gate oxide forming with hard mask
...
Patent Primary Examiner
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Kyoung Lee
Patent abstract

In one aspect, a magnetoresistance structure includes a magnetoresistance stack that includes a plurality of layers that includes a first set of one or more magnetoresistance layers and a second set of one or more magnetoresistance layers. The magnetoresistance structure also includes side walls attached to the sides of the first set of one or more magnetoresistance layers and disposed on the second set of one or more magnetoresistance layers.

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