Patent 11170832 was granted and assigned to Samsung on November, 2021 by the United States Patent and Trademark Office.
A magnetic memory device includes a first conductive line extending in a first direction on a substrate, a first magnetic pattern on the first conductive line, the first magnetic pattern including a first portion and a second portion that have different thicknesses, and a second conductive line on the first magnetic pattern and extending in a second direction intersecting the first direction.