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US Patent 7094681 Semiconductor device fabrication method

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Patent
Patent
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Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
70946810
Patent Inventor Names
Rempei Nakata0
Hideshi Miyajima0
Keiji Fujita0
Date of Patent
August 22, 2006
0
Patent Application Number
107014760
Date Filed
November 6, 2003
0
Patent Primary Examiner
‌
Thanhha Pham
0
Patent abstract

Disclosed is a semiconductor device comprising a semiconductor substrate, a porous insulating film formed above the semiconductor substrate, the porous insulating film having a relative dielectric constant of 2.5 or less and including a first insulating material, at least a portion of pores in the porous insulating film having on the inner wall thereof a layer of a second insulating material which differs in nature from the first insulating material, and a plug and/or a wiring layer buried in the porous insulating film.

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