Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
S. Brad Herner0
Date of Patent
May 26, 2009
0Patent Application Number
117652540
Date Filed
June 19, 2007
0Patent Primary Examiner
Patent abstract
A method for annealing a diode formed of a silicon-germanium alloy that minimizes leakage current is disclosed. The method includes the steps of forming semiconductor pillars of an alloy of silicon and germanium; heating the pillars at a first temperature for at least 30 minutes, and then heating the pillars at a second temperature higher than the first temperature of the alloy for up to 120 seconds. The invention further includes a monolithic three dimensional memory array of a plurality of p-i-n diodes, the p-i-n diodes being formed of a silicon-germanium alloy that have been subjected to a two-stage heating process.
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