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Binh Tran

based in Vietnam

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Edits on 13 May, 2022

edited on 13 May, 2022

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Location

Edits on 14 Dec, 2021

"Remove inverse infobox"

edited on 14 Dec, 2021

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Patent primary examiner of

US Patent 7309656 Method for forming step channel of semiconductor device

US Patent 7977246 Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere

Edits on 8 Dec, 2021

edited on 8 Dec, 2021

Edits made to:

Infobox (+1 properties)

Infobox

Patent primary examiner of

US Patent 7977246 Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere

Edits on 23 Nov, 2021

edited on 23 Nov, 2021

Edits made to:

Infobox (+1 properties)

Infobox

Patent primary examiner of

US Patent 7309656 Method for forming step channel of semiconductor device

"Created via: Entity Importer"

created this topic on 23 Nov, 2021

Edits made to:

Infobox (+2 properties)

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Binh Tran

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Current Employer

United States Patent and Trademark Office

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