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Ermias T Woldegeorgis
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Edits on 14 Dec, 2021
"Remove inverse infobox"
Golden AI
edited on 14 Dec, 2021
Edits made to:
Infobox
(
-5
properties)
Infobox
Patent primary examiner of
US Patent 11170992 Area selective deposition for cap layer formation in advanced contacts
US Patent 11183426 Method for forming a FinFET structure that prevents or reduces deformation of adjacent fins
US Patent 11183559 Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device
US Patent 11183578 Contact over active gate employing a stacked spacer
US Patent 11189700 Fabrication of wrap-around and conducting metal oxide contacts for IGZO non-planar devices
Edits on 2 Dec, 2021
Golden AI
edited on 2 Dec, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11189700 Fabrication of wrap-around and conducting metal oxide contacts for IGZO non-planar devices
Edits on 25 Nov, 2021
Golden AI
edited on 25 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11183578 Contact over active gate employing a stacked spacer
Golden AI
edited on 25 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11183559 Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device
Golden AI
edited on 25 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11183426 Method for forming a FinFET structure that prevents or reduces deformation of adjacent fins
Edits on 11 Nov, 2021
Golden AI
edited on 11 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11170992 Area selective deposition for cap layer formation in advanced contacts
"Created via: Entity Importer"
Golden AI
created this topic on 11 Nov, 2021
Edits made to:
Infobox
(
+2
properties)
Ermias T Woldegeorgis
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United States Patent and Trademark Office
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