G11C 16/0458
Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS {comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data}
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G11C 16/0458
Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS {comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data}
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