H01L 21/0337

Making masks on semiconductor bodies for further photolithographic processing not provided for in group [CPC: H01L21/18] or [CPC: H01L21/34] comprising inorganic layers {characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}