H01L 29/66537
{Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region }
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Edits on 5 Mar, 2022
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H01L 29/66537
{Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region }
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