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H01L 29/66787

{Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel}

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"update inverses"

edited on 16 Mar, 2022

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"Entity importer update"

edited on 16 Mar, 2022

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"Created via: Entity Importer"

created this topic on 5 Mar, 2022

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Description (+110 characters)

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H01L 29/66787

{Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel}

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Patent classification

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Cooperative Patent Classification

Website

http://data.epo.org/linked-data/def/cpc/H01L29-66787

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