Golden has been acquired by ComplyAdvantage.Read about it here ⟶

‌

H01L 29/7786

Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT {; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}

Overview Structured Data Issues Contributors Activity

All edits

Edits on 16 Mar, 2022

"update inverses"

edited on 16 Mar, 2022

Edits made to:

Infobox (+1 properties)

Infobox

Child classification

"Entity importer update"

edited on 16 Mar, 2022

Edits made to:

Infobox (+1 properties)

Infobox

Parent classification

Edits on 5 Mar, 2022

"Created via: Entity Importer"

created this topic on 5 Mar, 2022

Edits made to:

Infobox (+3 properties)

Description (+312 characters)

‌

H01L 29/7786

Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT {; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}

Infobox

Is a

Patent classification

Classification Type

Cooperative Patent Classification

Website

http://data.epo.org/linked-data/def/cpc/H01L29-7786

Find more entities like H01L 29/7786

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Golden Query Tool