H01L 31/1848
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN}
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Edits on 5 Mar, 2022
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H01L 31/1848
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN}
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