PARTOW TECHNOLOGIES LLC STTR Phase I Award, January 2023

Ultra-Wide bandgap materials such as GaN and Ga2O3 are emerging as preferred materials in high power applications due to their high breakdown field. The thermal dissipation is poor in both those materials due to low thermal conductivity. A high thermal conductivity material such as SiC is used as a growing substrate, however, the thermal conductivity is still limited due to defects in the interface of grown area. Direct bonding of GaN or Ga2O3 to SiC can resolve the thermal barrier resistance problem. Here, we propose a heterogeneous surface activated atomic diffusion bonding system to bond those materials to SiC. The thermal, mechanical, electrical, and optical behavior of the bond interface will be characterized. In addition, structural and chemical properties of bond interface will be characterized using TEM, EDX and XRD. Improving thermal barrier resistance in the interfacial area of the bonded wafers will lead to higher efficiency and improved power electronic systems needed by Navy and DoD.