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US Patent 10002962 Vertical FET structure

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
April 27, 2016
Date of Patent
June 19, 2018
Patent Application Number
15139937
Patent Citations Received
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US Patent 11949011 Vertical transistor with gate encapsulation layers
0
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US Patent 11075280 Self-aligned gate and junction for VTFET
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US Patent 11282752 Method of forming vertical field-effect transistor devices having gate liner
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US Patent 11309405 Vertical field effect transistor device having protruded shallow trench isolation and method for manufacturing the same
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US Patent 11515217 Complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate
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US Patent 10453939 Reduced capacitance in vertical transistors by preventing excessive overlap between the gate and the source/drain
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US Patent 10971407 Method of forming a complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate
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US Patent 11024738 Measurement of top contact resistance in vertical field-effect transistor devices
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10002962
Patent Primary Examiner
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Christine Enad

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