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US Patent 10003022 RRAM cell structure with conductive etch-stop layer
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Patent
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Date Filed
March 4, 2014
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Date of Patent
June 19, 2018
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Patent Application Number
14196361
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Patent Citations Received
US Patent 11489112 Resistive random access memory device and methods of fabrication
US Patent 10651380 Memory devices and methods of forming the same
US Patent 10720580 RRAM device and method of fabrication thereof
US Patent 11075339 Correlated electron material (CEM) devices with contact region sidewall insulation
US Patent 11289649 Non-volatile memory elements with a narrowed electrode
US Patent 11289650 Stacked access device and resistive memory
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Patent Inventor Names
Ming Chyi Liu
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Shih-Chang Liu
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Yuan-Tai Tseng
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Chern-Yow Hsu
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Chia-Shiung Tsai
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10003022
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Patent Primary Examiner
Abul Kalam
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