Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chim Seng Seet0
Kai Hung Alex See0
Lei Wang0
Date of Patent
June 26, 2018
0Patent Application Number
154329410
Date Filed
February 15, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A low-k dielectric layer, such as SiCOH, with high and stable chemical mechanical polishing (CMP) removal rate (RR) is disclosed. The polishing rate enhancer (PRE) is disposed on the low-k dielectric layer. The PRE increases the CMP RR during CMP. Furthermore, the PRE stabilizes the increases CMP RR. This is particularly useful, for example, for memory applications in which the storage unit is formed in a low-k back-end-of-line (BEOL) dielectric layer. For example, the topography created can be quickly planarized by CMP while producing a uniform polished surface of the low-k dielectric layer due to the shortened processing time.
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