Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mark S. Rodder0
Joon Goo Hong0
Date of Patent
June 26, 2018
Patent Application Number
15683304
Date Filed
August 22, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of manufacturing a gate-all-around (GAA) nanosheet (NS) field effect transistor (FET) includes forming a stack on a substrate. The stack includes an alternating arrangement of conducting channel layers and non-uniform sacrificial regions. Each of the non-uniform sacrificial regions includes upper, middle, and lower sacrificial layers. The upper and lower sacrificial layers are configured to etch at a first etch rate and the middle sacrificial layer is configured to etch at a second etch rate greater than the first etch rate.
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