Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 3, 2018
Patent Application Number
13032866
Date Filed
February 23, 2011
Patent Citations Received
Patent Primary Examiner
Patent abstract
An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.
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