Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yuuzo Kamiguchi0
Naoharu Shimomura0
Satoshi Shirotori0
Tomoaki Inokuchi0
Hiroaki Yoda0
Katsuhiko Koui0
Kazutaka Ikegami0
Date of Patent
July 17, 2018
Patent Application Number
15453176
Date Filed
March 8, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
According to one embodiment, a nonvolatile memory includes a conductive line including a first portion, a second portion and a third portion therebetween, a storage element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer therebetween, and the first magnetic layer being connected to the third portion, and a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential.
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