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US Patent 10026621 SiN spacer profile patterning

Patent 10026621 was granted and assigned to Applied Materials on July, 2018 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Applied Materials
Applied Materials
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Date Filed
November 14, 2016
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Date of Patent
July 17, 2018
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Patent Applicant
Applied Materials
Applied Materials
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Patent Application Number
15350803
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Patent Citations Received
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US Patent 11437242 Selective removal of silicon-containing materials
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US Patent 11264213 Chemical control features in wafer process equipment
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US Patent 11276559 Semiconductor processing chamber for multiple precursor flow
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US Patent 11276590 Multi-zone semiconductor substrate supports
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US Patent 11682560 Systems and methods for hafnium-containing film removal
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US Patent 11328909 Chamber conditioning and removal processes
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US Patent 11361939 Semiconductor processing chamber for multiple precursor flow
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US Patent 11417534 Selective material removal
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US Patent 11476093 Plasma etching systems and methods with secondary plasma injection
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US Patent 10170336 Methods for anisotropic control of selective silicon removal
•••
Patent Inventor Names
Jungmin Ko
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Nitin Ingle
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Theodore Wou
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Tom Choi
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Kwang-Soo Kim
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10026621
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Patent Primary Examiner
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Allan Olsen
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