Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Loic Gaben0
Date of Patent
July 17, 2018
0Patent Application Number
154670820
Date Filed
March 23, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An all-around gate field-effect transistor includes two drain-source areas supported by a semiconductor substrate. At least one channel region, surrounded with a gate insulated by a gate insulator, extends between the two drain-source areas. The at least one channel region is located above an insulating layer resting on the substrate and positioned between the two drain-source areas. This insulating layer has a thickness-to-permittivity ratio at least 2 times greater than that of the gate insulator. An extension of the insulating layer is positioned to insulate at least one of the channel regions from the semiconductor substrate.
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