US Patent 10026895 Superlattice memory and crosspoint memory device
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Patent abstract
According to one embodiment, a memory device includes a superlattice structure portion containing first chalcogen-compound layers and second chalcogen-compound layers differing in composition from the first chalcogen-compound layers are alternately deposited, a first layer provided on one of main surfaces of the superlattice structure portion in a deposition direction thereof, which has a larger energy gap than that of the superlattice structure portion, and a second layer provided on the other main surface of the superlattice structure portion in the deposition direction, which has a larger energy gap than that of the superlattice structure portion.
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Patent Inventor Names
Yoshiki Kamata0
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Patent Jurisdiction
Patent Number
100268950
Date of Patent
July 17, 2018
0Patent Application Number
154275250
Date Filed
February 8, 2017
0Patent Primary Examiner
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US Patent 10026895 Superlattice memory and crosspoint memory device
Infobox
Is a
Patent jurisdiction
Patent number
10026895
Date of patent
July 17, 2018
Patent application number
15427525
Date Filed
February 8, 2017
Patent primary examiner
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