Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 24, 2018
Patent Application Number
15164824
Date Filed
May 25, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.
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