Patent attributes
According to an embodiment, a high-frequency semiconductor amplifier circuit includes an input terminal and an output terminal. A gate of a first transistor is connected to the input terminal. A drain of the first transistor is connected to the output terminal. A second transistor is connected between a source of the first transistor and a reference potential terminal. A bias generation circuit has an input control signal terminal, a bias voltage terminal connected to the gate of the first transistor, a control voltage terminal connected to a gate of the second transistor, and an intermediate voltage terminal connected to the drain of the first transistor. The bias generation circuit supplies a control voltage, a bias voltage, and a first voltage according to the input control signal.
