US Patent 10037804 Adjusting target values of resistive memory devices

Examples disclosed herein relate to programming a first conductance of a first resistive memory device based on a first target value. The first conductance of the first resistive memory device is measured to determine a deviation of the first resistive memory device from the first target value. A second target value of a second resistive memory device is adjusted based on the deviation, and a second conductance of the second resistive memory device is programmed based on the adjusted second target value.