Patent attributes
A method and structure for providing a unique structure for FinFET S/D features described a semiconductor device including a substrate having a fin extending therefrom, the fin including a channel region, and source and drain regions adjacent to and on either side of the channel region. In various embodiments, a gate structure is disposed over the channel region, and the gate structure includes a metal layer disposed over a dielectric layer. In some examples, a first epitaxial layer at least partially embedded within the source and drain regions. In addition, a second epitaxial layer is disposed over the first epitaxial layer, where a top surface of the second epitaxial layer is higher than a top surface of the metal layer along a direction normal to the substrate. In various examples, a silicide layer is also disposed over, and in contact with, the second epitaxial layer.
