Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yu-Cheng Tung0
En-Chiuan Liou0
Kuan-Hung Chen0
Rung-Yuan Lee0
Chun-Tsen Lu0
Date of Patent
August 7, 2018
Patent Application Number
15641236
Date Filed
July 4, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a plural fin structures, two gates, a protection layer and an interlayer dielectric layer. The fin structures are disposed on a substrate. The two gates are disposed on the substrate across the fin structures. The protection layer is disposed on the substrate, surrounded sidewalls of the two gates. The interlayer dielectric layer is disposed on the substrate, covering the fin structures and the two gates.
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