Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 7, 2018
Patent Application Number
15817325
Date Filed
November 20, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
Aspects of the disclosure include a semiconductor structure that includes a vertical fin structure having a top portion, a bottom portion, vertical side walls, a source area in contact with the vertical fin structure, a drain area in contact with the vertical fin structure, a plurality of spacers comprising a first oxide layer in contact with the source area, and a second oxide layer in contact with the drain area. The first oxide layer can have a thickness that is equal to a thickness of the second oxide layer.
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