US Patent 10049733 Reusing sneak current in accessing memory cells

A method to access two memory cells include determining a first cell current flowing through a first memory cell by subtracting a sneak current associated with the first memory cell from a first access current of the first bitline and determining a second cell current flowing through a second memory cell in the first bitline or a second bitline by subtracting the sneak current associated with the first memory cell from a second access current of the first bitline or the second bitline.