Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chia-Lin Hsu0
Yen-Ting Chen0
Date of Patent
August 14, 2018
Patent Application Number
15800164
Date Filed
November 1, 2017
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A method of forming a semiconductor device includes receiving a structure having a substrate, a gate trench over the substrate, and a dielectric layer over the substrate and surrounding the gate trench. The method further includes forming a gate dielectric layer in the gate trench, forming a barrier layer in the gate trench and over the gate dielectric layer, and treating the barrier layer to roughen an outer surface of the barrier layer, resulting in a treated barrier layer. The method further includes forming an n-type work function metal layer over the treated barrier layer.
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