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US Patent 10050115 Tapered gate oxide in LDMOS devices
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Patent
Date Filed
December 30, 2014
Date of Patent
August 14, 2018
Patent Application Number
14585933
Patent Citations Received
US Patent 11942542 Semiconductor device and fabrication method thereof
0
US Patent 11552190 High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region
US Patent 11342453 Field effect transistor with asymmetric gate structure and method
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10050115
Patent Primary Examiner
Jarrett Stark
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