US Patent 10050128 Gate structure of field effect transistor with footing
Patent 10050128 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2018 by the United States Patent and Trademark Office.
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In some embodiments, a field effect transistor structure includes a first semiconductor structure and a gate structure. The first semiconductor structure includes a channel region, and a source region and a drain region. The source region and the drain region are formed on opposite ends of the channel region, respectively. The gate structure includes a central region and footing regions. The central region is formed over the first semiconductor structure. The footing regions are formed on opposite sides of the central region and along where the central region is adjacent to the first semiconductor structure.
US Patent 10050128 Gate structure of field effect transistor with footing
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