US Patent 10050192 Magnetic memory device having buffer layer
Patent 10050192 was granted and assigned to IMEC on August, 2018 by the United States Patent and Trademark Office.
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The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (STT-MRAM) devices having a magnetic tunnel junction (MTJ), and further relates to methods of fabricating the STT-MRAM devices. In an aspect, a magnetoresistive random access memory (MRAM) device has a magnetic tunnel junction (MTJ). The MTJ includes a magnetic reference layer including CoFeB, a magnetic free layer comprising CoFeB, and a barrier layer including MgO. The barrier layer is interposed between the magnetic reference layer and the magnetic free layer. The barrier layer has a thickness adapted to tunnel electrons between the magnetic reference layer and the magnetic free layer sufficient to cause a change in the magnetization direction of the variable magnetization under a bias. The MTJ further comprises a buffer layer comprising one or more of Co, Fe, CoFe and CoFeB, where the buffer layer is doped with one or both of C and N.
US Patent 10050192 Magnetic memory device having buffer layer
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