US Patent 10056454 Semiconductor device and method of manufacturing the same

A semiconductor device includes a semiconductor substrate. A first fin extends in a first direction. A first nano sheet structure includes at least two first nano sheets which extend in the first direction parallel to an upper surface of the first fin. A second fin extends in the first direction. A second nano sheet structure includes at least two second nano sheets which extend in the first direction parallel to an upper surface of the second fin. At least one of the at least two first nano sheets has a different thickness from at least one of the at least two second nano sheets.