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US Patent 10068973 Doped aluminum nitride crystals and methods of making them

Patent 10068973 was granted and assigned to Crystal IS, Inc. on September, 2018 by the United States Patent and Trademark Office.

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Patent abstract

Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.

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