US Patent 10079059 Memristor cell read margin enhancement
Patent 10079059 was granted and assigned to Hewlett Packard Enterprise on September, 2018 by the United States Patent and Trademark Office.
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Patent abstract
Memristor cell read margin enhancement employs programming switched memristor sub-bits of a memristor cell with a first resistive state to increase a relative read margin of the memristor cell. The switched memristor sub-bits of the memristor cell are connected in series. The read margin of the memristor cell is increased relative to a read margin of either of the switched memristor sub-bits.
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Patent Inventor Names
Brent Buchanan0
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Patent Number
100790590
Date of Patent
September 18, 2018
0Patent Application Number
153246870
Date Filed
July 28, 2014
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US Patent 10079059 Memristor cell read margin enhancement
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
10079059
Date of patent
September 18, 2018
Patent application number
15324687
Date Filed
July 28, 2014
Patent primary examiner
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