Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 25, 2018
Patent Application Number
15177358
Date Filed
June 9, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming a vertical fin field effect transistor (vertical finFET) with a self-aligned bottom source/drain, including forming a doped layer on a substrate, forming one or more vertical fins on the doped layer, forming a protective layer on the one or more vertical fins, wherein the protective layer has a thickness, and forming at least one isolation trench by removing at least a portion of the protective layer on the doped layer, wherein the isolation trench is laterally offset from at least one of the one or more vertical fins by the thickness of the protective layer.
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