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US Patent 10083874 Gate cut method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
March 23, 2017
Date of Patent
September 25, 2018
Patent Application Number
15467536
Patent Citations Received
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US Patent 11626510 Fin Field-Effect Transistor and method of forming the same
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US Patent 11791217 Gate structure and method with dielectric gates and gate-cut features
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US Patent 11854903 Footing removal in cut-metal process
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US Patent 11948842 Etch stop layer between substrate and isolation structure
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US Patent 12027608 Semiconductor structure having dielectric structure extending into second cavity of semiconductor Fin
0
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US Patent 11482420 Semiconductor device having a dummy gate with a cut-out opening between adjacent fins and methods of forming the same
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US Patent 10388771 Method and device for forming cut-metal-gate feature
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US Patent 10396206 Gate cut method
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US Patent 10629492 Gate structure having a dielectric gate and methods thereof
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US Patent 11557660 Method and device for forming cut-metal-gate feature
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•••
Patent Inventor Names
Zhenyu Hu
0
Haiting Wang
0
Hong Yu
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10083874
Patent Primary Examiner
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Stephanie P Duclair

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