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US Patent 10083961 Gate cut with integrated etch stop layer

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
September 7, 2016
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Date of Patent
September 25, 2018
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Patent Application Number
15258513
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Patent Citations Received
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US Patent 12074165 Gate cut with integrated etch stop layer
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US Patent 10483369 Methods of forming replacement gate structures on transistor devices
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US Patent 10580773 Gate cut with integrated etch stop layer
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US Patent 11552077 Gate cut with integrated etch stop layer
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US Patent 11600639 Semiconductor device and method of manufacturing the same
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US Patent 11349013 IC product comprising a novel insulating gate separation structure for transistor devices
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US Patent 11776957 Gate cut with integrated etch stop layer
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US Patent 11522068 IC product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structures
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US Patent 10453936 Methods of forming replacement gate structures on transistor devices
Patent Inventor Names
Marc A. Bergendahl
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Rajasekhar Venigalla
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Andrew M. Greene
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10083961
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Patent Primary Examiner
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None Marc-Armand
0

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