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US Patent 10083964 Double diffusion break gate structure without vestigial antenna capacitance

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Sivananda Kanakasabapathy0

Alexander Reznicek0

Date of Patent

September 25, 2018

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Patent Application Number

158122490

Date Filed

November 14, 2017

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Patent Citations Received

US Patent 11955369 Recessed local interconnect formed over self-aligned double diffusion break

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US Patent 10573748 Circuits employing a double diffusion break (DDB) and single diffusion break (SDB) in different type diffusion region(s), and related fabrication methods

US Patent 10622479 Circuits employing a double diffusion break (DDB) and single diffusion break (SDB) in different type diffusion region(s), and related fabrication methods

US Patent 10892322 Circuits employing a double diffusion break (DDB) and single diffusion break (SDB) in different type diffusion region(s), and related fabrication methods

US Patent 10950506 Forming single and double diffusion breaks

US Patent 11482445 Method for manufacturing semiconductor structure

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US Patent 10475693 Method for forming single diffusion breaks between finFET devices and the resulting devices

Patent Primary Examiner

Joseph Schoenholtz

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Patent abstract

A double diffusion break (DDB) gate structure is provided by removing the vestigial antenna to provide a space and the space is filled, at least in part, with an interlevel dielectric (ILD) material. Removal of the vestigial antenna from the DDB gate structure will reduce the device capacitance and improve device performance, while enabling DDB in tight integration schemes.

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