Is a
Patent attributes
Patent Applicant
Patent Jurisdiction
Patent Number
Patent Inventor Names
You-Ru Lin0
Cheng-Tien Wan0
Chih-Hsin Ko0
Yi-Jing Lee0
Cheng-Hsien Wu0
Date of Patent
September 25, 2018
0Patent Application Number
156478200
Date Filed
July 12, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.
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