Patent attributes
A semiconductor device according to an embodiment includes a normally-off transistor having a first source, a first drain, and a first gate; a normally-on transistor having a second source electrically connected to the first drain, a second drain, and a second gate, a capacitor having a first end and a second end, the second end being electrically connected to the second gate, a first diode having a first anode electrically connected between the second end and the second gate and having a first cathode electrically connected to the second source, a first resistor provided between the first end and the first gate, and a second diode having a second anode electrically connected to the first end and having a second cathode electrically connected to the first gate, the second diode being provided in parallel with the first resistor.
