Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Cheng-Tai Hsiao0
Xiaomeng Chen0
Yen-Chang Chu0
Yeur-Luen Tu0
Chia-Shiung Tsai0
Hsun-Chung Kuang0
Lan-Lin Chao0
Ping-Yin Liu0
Date of Patent
October 2, 2018
0Patent Application Number
150184220
Date Filed
February 8, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.
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