Patent attributes
The present invention provides an integrated circuit with a dummy standard cell. The integrated circuit includes: a first metal line and a second metal line stretching along a first direction; a first dummy gate and a second dummy gate stretching along a second direction; Plural fin structures stretching along the first direction; A gate structure disposed on the fin structures and stretching along the second direction; Plural sets of short contact plug and long contact plug disposed between the first dummy gate, the second dummy gate and the gate structures; a doping region overlaps with the long contact plugs; a gate contact plug disposed on the gate structures; plural contact plugs disposed on and electrical contact the long contact plugs; A metal layer includes the first metal line, the second metal line.