Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 9, 2018
Patent Application Number
15896394
Date Filed
February 14, 2018
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a fin structure formed over a substrate and a gate structure formed across the fin structure. The semiconductor structure further includes a bottom spacer formed on a lower part of a sidewall of the gate structure and an upper spacer formed on an upper part of the sidewall of the gate structure. In addition, the upper spacer includes an air gap formed in a dielectric material.
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