Is a
Patent attributes
Patent Applicant
Patent Jurisdiction
Patent Number
Patent Inventor Names
Clement Hsingjen Wann0
Chih-Hsin Ko0
Cheng-Hsien Wu0
Date of Patent
October 9, 2018
0Patent Application Number
156872270
Date Filed
August 25, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of fabricating a semiconductor device comprises providing a substrate with a shallow trench isolation (STI) within the substrate and a gate stack. A cavity is formed between the gate stack and the STI. The cavity comprises one sidewall formed by the STI, one sidewall formed by the substrate, and a bottom surface formed by the substrate. A film is grown in the cavity and thereafter an opening formed by removing a first portion of the strained film until exposing the bottom surface of the substrate while a second portion of the strained film adjoins the STI sidewall. Another epitaxial layer is then grown in the opening.
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