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US Patent 10102894 Magnetic memory
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Patent
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Date Filed
September 7, 2017
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Date of Patent
October 16, 2018
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Patent Application Number
15698242
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Patent Citations Received
US Patent 11842758 Memory cell including a spin-orbit-torque (SOT) layer and magnetic tunnel junction (MTJ) layer stacks and writing method therefor
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US Patent 10347313 Magnetic memory
US Patent 10460785 Parallel write scheme utilizing spin hall effect-assisted spin transfer torque random access memory
Patent Inventor Names
Yuuzo Kamiguchi
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Kazutaka Ikegami
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Naoharu Shimomura
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Tomoaki Inokuchi
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Hiroaki Yoda
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Hiroki Noguchi
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Katsuhiko Koui
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10102894
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Patent Primary Examiner
Michael Tran
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