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US Patent 10103318 Magnetoresistive element

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US Patent 12089505 Magnetic memory device
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US Patent 12063869 Magnetic memory device
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Patent abstract

According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.

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US Patent 10867650 Magnetic storage device
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US Patent 11462680 Magnetic storage device
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US Patent 11563168 Magnetic memory device that suppresses diffusion of elements
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US Patent 11495740 Magnetoresistive memory device
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US Patent 11462680 Magnetic storage device
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Patent
Patent
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
101033180
Date of Patent
October 16, 2018
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Patent Application Number
152628210
Date Filed
September 12, 2016
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Patent Citations Received
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US Patent 10867650 Magnetic storage device
0
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US Patent 11316095 Magnetic device which improves write error rate while maintaining retention properties
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US Patent 11404098 Memory device
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Patent Primary Examiner
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Cuong Q Nguyen
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US Patent 11404098 Memory device
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US Patent 10867650 Magnetic storage device
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US Patent 11404098 Memory device
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US Patent 11316095 Magnetic device which improves write error rate while maintaining retention properties
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 US Patent 10103318 Magnetoresistive element

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
10103318
Date of patent
October 16, 2018
Patent application number
15262821
Date Filed
September 12, 2016
Patent primary examiner
‌
Cuong Q Nguyen

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