US Patent 10103321 Magnetoresistive element and magnetic memory
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Patent abstract
A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Mn2VZ, where V represents vanadium, and Z represents at least one element of Al or Ga.
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Patent Inventor Names
Atsushi Sugihara0
Qinli Ma0
Shigemi Mizukami0
Tadaomi Daibou0
Terunobu Miyazaki0
Yushi Kato0
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Patent Jurisdiction
Patent Number
101033210
Date of Patent
October 16, 2018
0Patent Application Number
152595250
Date Filed
September 8, 2016
0Patent Primary Examiner
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US Patent 10103321 Magnetoresistive element and magnetic memory
Infobox
Is a
Patent jurisdiction
Patent number
10103321
Date of patent
October 16, 2018
Patent application number
15259525
Date Filed
September 8, 2016
Patent primary examiner
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