US Patent 10103324 Memory device and manufacturing method of memory device

A memory device includes a plurality of bit lines, including first and second bit lines, extending in a first direction away from a substrate, a plurality of word lines, including first and second word lines, extending in a second direction crossing the first direction and substantially parallel to a surface of the substrate, a first variable resistance film between the first word line and the first bit line and a second variable resistance film between the second word line and the second bit line, an insulating material electrically isolating the first and second word lines and the first and second bit lines, and a plurality of air gaps between the first and second bit lines.